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HRV103A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0398-0100 Rev.1.00 Oct 12, 2004
Features
* Low forward voltage drop and suitable for high efficiency rectifying. * Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRV103A Laser Mark S1 Package Code TURP
Pin Arrangement
Cathode mark Mark 1
S1
2 1. Cathode 2. Anode
Rev.1.00 Oct 12, 2004 page 1 of 5
HRV103A
Absolute Maximum Ratings
(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 2 IO * IFSM * Tj
1
Value 30 30 1 5 125
Unit V V A A C C
Storage temperature Tstg -55 to +125 Notes: 1. 10ms sine wave 1 pulse 2. Ta = 44C, With Ceramics board (board size: 50mm x 50 mm, Land size 2mm x 2 mm) Short form wave (180C), VR = 10 V.
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Symbol VF1 Min Typ Max 0.27 0.36 0.42 100 1000 40 -- A pF C/W Unit V Test Condition IF = 100 mA IF = 700 mA IF = 1 A, VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board * Glass epoxy board *
2
--
-- -- -- -- -- -- --
--
-- -- -- -- -- 100 200
Reverse current Capacitance Thermal resistance
VF2 VF3 IR1 IR2 C
Rth(j-a)
Notes: 1. Ceramics board
2.0
0.5
2.0 0.3 2.0
50hx50wx0.8t
Unit: mm
1.0
2. Glass epoxy board
6.0
0.5
6.0 0.3 2.0
50hx50wx0.8t
Unit: mm
1.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
Rev.1.00 Oct 12, 2004 page 2 of 5
HRV103A
Main Characteristics
1.0
Ta = 75C
10-1 Pulse test
Ta = 25C
Pulse test 10-2
Reverse current IR (A)
Ta = 75C
10-1
Forward current IF (A)
10-2
10-3
Ta = 25C
10-3
10-4
10-4
10-5
10-5
10-6
0
0.2
0.4
0.6
0.8
1.0
10-6
0
10
20
30
40
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz Pulse test 100
Capacitance C (pF)
10
1.0 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00 Oct 12, 2004 page 3 of 5
HRV103A
0.8
Reverse power dissipation Pd (W)
8
0V D=5/6 t T Tj = 125C t D=-- T D=1/3 0A t T t D=-- T D=1/6 sin(=180) D=1/3
Forward power dissipation Pd (W)
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
7 6 5 4 3 2 1 0 0
Tj = 25C
D=1/2 DC
D=1/2
sin(=180)
0.5
1.0
1.5
10
20
30
40
Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current 1.2
Reverse voltage VR (V) Fig.5 Reverse power dissipation vs. Reverse voltage
Average rectified current IO (A)
1.0
VR=VRRM/3 Tj =125C Rth(j-a)=100C/W DC
0.8
D=1/2 sin(=180)
0.6
D=1/3 D=1/6
0.4
0.2
0 -25
0
25
50
75
100
125
Ambient temperature Ta (C) Fig.6 Average rectified current vs. Ambient temperature
Rev.1.00 Oct 12, 2004 page 4 of 5
HRV103A
Package Dimensions
Unit: mm
0.80 0.05
2.50 0.10
0.13 0.05
0.55 Max
0.20 1.25 + 0.10 -
1.90 0.1
0.60 0.05
Package Code JEDEC JEITA Mass (reference value)
TURP -- -- 0.004 g
Rev.1.00 Oct 12, 2004 page 5 of 5
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